Passivation of Si Wafers by ALD-Al2O3 Films with Different Surface Conditioning
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چکیده
منابع مشابه
Passivation of Si Wafers by ALD-Al2O3 Films with Different Surface Conditioning
We investigate the passivation quality of Al2O3 thin films grown by atomic laver deposition on differently etched surfaces of ~500 μm thick, 2.13 Ωcm p-type float zone silicon wafers with an (100) crystal orientation. The applied CPand KOH-etches lead to differently shaped surface morphologies but almost equal root-mean-squared (rms) roughnesses of ~0.95 nm (CP) and ~1.07 nm (KOH) measured with...
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This data article is related to the recently published article '20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%' (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al2O3 rear-surface passivation layer deposited by atomic layer deposition ...
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In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer dep...
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The reduction in electronic recombination losses by the passivation of silicon surfaces is a critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al2O3) nanolayers synthesized by atomic layer deposition (ALD) emerged as a novel solution for the passivation of pand n-type crystalline Si (c-Si) surfaces. Today, high efficiencies have been realized by the implementation of ul...
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ژورنال
عنوان ژورنال: Energy Procedia
سال: 2011
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2011.06.198